Quantum well geometrical effects on two-dimensional electron mobility

A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various AlGaAs/GaAs/AlGaAs quantum well structures has been performed. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates was evaluated. Our results showed that a maximum two-dimensional electron mobility can be achieved in a quantum well structure where the energy difference between the first subband and the second subband is about two times the polar optical phonon energy.