Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition
Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxia...
Gespeichert in:
| Veröffentlicht in: | Solid state communications 1992, Vol.83 (11), p.927-930 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 930 |
|---|---|
| container_issue | 11 |
| container_start_page | 927 |
| container_title | Solid state communications |
| container_volume | 83 |
| creator | Kim, T.W. Jung, M. Chung, I.H. Lee, J.H. Park, H.L. |
| description | Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be
n-type with
N
d
N
a
in the low 10
16 cm
−3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(1 1 1) at 230°C appeared to have strong and sharp exciton transitions and weak defect-related bands. |
| doi_str_mv | 10.1016/0038-1098(92)90913-T |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25829974</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>003810989290913T</els_id><sourcerecordid>25829974</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-f7d3ce4a5c61bb70be897bfd25c6c51a3c23a17d2b8b5bdc840b2d055da843833</originalsourceid><addsrcrecordid>eNp9kEtLJDEUhYOMYI_6D1zUQkQXNeZRqSQbQRp1BGEE23XI45ZGuitlklb896ZtcTmrezn5zg3nIHRE8B-CSX-OMZMtwUqeKnqmsCKsXeygGZFCtVT0_S80-0H20O-cXzDGQgoyQ-Y-xQlSCZCbODRzv4Dz2_HBNs9QIMVc0tqVdaqvTym-j439aAqsqsNs1CoaH2AszZuZYmpKMmOuS2k8TDGHEuJ4gHYHs8xw-D330eP11WL-t737d3M7v7xrHeu70g7CMwed4a4n1gpsQSphB0-r4DgxzFFmiPDUSsutd7LDlnrMuTeyY5KxfXSyvTul-LqGXPQqZAfLpRkhrrOmXFKlRFfBbgu6mi8nGPSUwsqkD02w3vSpN2XpTVlaUf3Vp15U2_H3fZOdWQ41qgv5x8s5x7iXFbvYYlCzvgVIOrvakAMfEriifQz__-cThKOMOA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25829974</pqid></control><display><type>article</type><title>Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition</title><source>Elsevier ScienceDirect Journals</source><creator>Kim, T.W. ; Jung, M. ; Chung, I.H. ; Lee, J.H. ; Park, H.L.</creator><creatorcontrib>Kim, T.W. ; Jung, M. ; Chung, I.H. ; Lee, J.H. ; Park, H.L.</creatorcontrib><description>Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be
n-type with
N
d
N
a
in the low 10
16 cm
−3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(1 1 1) at 230°C appeared to have strong and sharp exciton transitions and weak defect-related bands.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/0038-1098(92)90913-T</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Solid state communications, 1992, Vol.83 (11), p.927-930</ispartof><rights>1992</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-f7d3ce4a5c61bb70be897bfd25c6c51a3c23a17d2b8b5bdc840b2d055da843833</citedby><cites>FETCH-LOGICAL-c364t-f7d3ce4a5c61bb70be897bfd25c6c51a3c23a17d2b8b5bdc840b2d055da843833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/003810989290913T$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,4009,27902,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5550068$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, T.W.</creatorcontrib><creatorcontrib>Jung, M.</creatorcontrib><creatorcontrib>Chung, I.H.</creatorcontrib><creatorcontrib>Lee, J.H.</creatorcontrib><creatorcontrib>Park, H.L.</creatorcontrib><title>Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition</title><title>Solid state communications</title><description>Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be
n-type with
N
d
N
a
in the low 10
16 cm
−3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(1 1 1) at 230°C appeared to have strong and sharp exciton transitions and weak defect-related bands.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLJDEUhYOMYI_6D1zUQkQXNeZRqSQbQRp1BGEE23XI45ZGuitlklb896ZtcTmrezn5zg3nIHRE8B-CSX-OMZMtwUqeKnqmsCKsXeygGZFCtVT0_S80-0H20O-cXzDGQgoyQ-Y-xQlSCZCbODRzv4Dz2_HBNs9QIMVc0tqVdaqvTym-j439aAqsqsNs1CoaH2AszZuZYmpKMmOuS2k8TDGHEuJ4gHYHs8xw-D330eP11WL-t737d3M7v7xrHeu70g7CMwed4a4n1gpsQSphB0-r4DgxzFFmiPDUSsutd7LDlnrMuTeyY5KxfXSyvTul-LqGXPQqZAfLpRkhrrOmXFKlRFfBbgu6mi8nGPSUwsqkD02w3vSpN2XpTVlaUf3Vp15U2_H3fZOdWQ41qgv5x8s5x7iXFbvYYlCzvgVIOrvakAMfEriifQz__-cThKOMOA</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Kim, T.W.</creator><creator>Jung, M.</creator><creator>Chung, I.H.</creator><creator>Lee, J.H.</creator><creator>Park, H.L.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1992</creationdate><title>Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition</title><author>Kim, T.W. ; Jung, M. ; Chung, I.H. ; Lee, J.H. ; Park, H.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-f7d3ce4a5c61bb70be897bfd25c6c51a3c23a17d2b8b5bdc840b2d055da843833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, T.W.</creatorcontrib><creatorcontrib>Jung, M.</creatorcontrib><creatorcontrib>Chung, I.H.</creatorcontrib><creatorcontrib>Lee, J.H.</creatorcontrib><creatorcontrib>Park, H.L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, T.W.</au><au>Jung, M.</au><au>Chung, I.H.</au><au>Lee, J.H.</au><au>Park, H.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition</atitle><jtitle>Solid state communications</jtitle><date>1992</date><risdate>1992</risdate><volume>83</volume><issue>11</issue><spage>927</spage><epage>930</epage><pages>927-930</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be
n-type with
N
d
N
a
in the low 10
16 cm
−3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(1 1 1) at 230°C appeared to have strong and sharp exciton transitions and weak defect-related bands.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/0038-1098(92)90913-T</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1098 |
| ispartof | Solid state communications, 1992, Vol.83 (11), p.927-930 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25829974 |
| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T16%3A28%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Properties%20of%20CdTe/InSb%20heterostructures%20grown%20by%20temperature%20gradient%20vapor%20transport%20deposition&rft.jtitle=Solid%20state%20communications&rft.au=Kim,%20T.W.&rft.date=1992&rft.volume=83&rft.issue=11&rft.spage=927&rft.epage=930&rft.pages=927-930&rft.issn=0038-1098&rft.eissn=1879-2766&rft.coden=SSCOA4&rft_id=info:doi/10.1016/0038-1098(92)90913-T&rft_dat=%3Cproquest_cross%3E25829974%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25829974&rft_id=info:pmid/&rft_els_id=003810989290913T&rfr_iscdi=true |