Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition

Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(1 1 1) orientation substrates in the growth temperature range between 180°C and 280°C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be n-type with N d  N a in the low 10 16 cm −3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(1 1 1) at 230°C appeared to have strong and sharp exciton transitions and weak defect-related bands.