Optical properties of free-standing silicon quantum wires

We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition...

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Veröffentlicht in:Applied physics letters 1992-05, Vol.60 (20), p.2525-2527
Hauptverfasser: SANDERS, G. D, YIA-CHUNG CHANG
Format: Artikel
Sprache:eng
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Zusammenfassung:We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 Å agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 Å can become comparable to that of bulk GaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106927