A new liquid chlorine source for silicon oxidation

A liquid organic chlorine source, trans-1,2-dichloroethylene (t-DCE), has been investigated as a replacement for HCl and 1,1,1-trichloroethane (TCA) in silicon oxidation processes. Silicon oxide growth rates are identical using t-DCE and TCA with equivalent chlorine inputs. Physical and electrical e...

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Veröffentlicht in:	Journal of the Electrochemical Society 1992, Vol.139 (12), p.L117-L118
Hauptverfasser:	HOCHBERG, A. K, LAGENDIJK, A, WERMER, P, ROBERTS, D. A, AGNY, R, ANDERS, B, COTNER, R, JEWETT, J, MULREADY, J, TRAN, M, TRIPLETT, B. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Chlorine compounds Condensed matter: structure, mechanical and thermal properties Environmental protection Exact sciences and technology Oxidation Ozone layer Physics Q1 Silica Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	A liquid organic chlorine source, trans-1,2-dichloroethylene (t-DCE), has been investigated as a replacement for HCl and 1,1,1-trichloroethane (TCA) in silicon oxidation processes. Silicon oxide growth rates are identical using t-DCE and TCA with equivalent chlorine inputs. Physical and electrical evaluations of silicon oxide films grown with t-DCE show that this chemical produces films as good or better than those grown with TCA. In addition, t-DCE is not an upper-atmosphere ozone depleter.
ISSN:	0013-4651 1945-7111
DOI:	10.1149/1.2069150