Enhancement of copper adhesion on alumina induced by ion-beam mixing

There is a scientific and technological interest in understanding and controlling the bonding process for joining metal to ceramics. Ion-beam mixing with 1.5 MeV-energy xenon-ion irradiation induces a significant enhancement of adhesion between thin copper films and polycrystalline alumina substrates. Sintered alpha -Al sub 2 O sub 3 substrates were mechanically polished then rinsed in acetone, ethanol and diethyloxide. Copper films were evaporated using an electron beam producing copper deposition thickness ranging from 40-60 nm. Ion-beam experiments were performed at room temperature with 1.5 MeV xenon ions. Tests and experiments peformed were: irradiation in a vacuum; the mean projected range and the mean range straggling of xenon ions in Cu film deposited on the laumina; xenon concentration together with the rate of deposited energy and the damage profiles near the metal-ceramic interface; Rutherford backscattering technique to determine the sputtering coefficient, the experimental xenon concentration, the mean projected range of energetic xenon ion and the atomic migration near the interface transmission electron microscopy; adhesion measurements; pin-pull test experiments; RBS experiments; and mechanical measurements. Photomicrographs, Graphs. 8 ref.--A.R.