Internal stress analysis in diamond films formed by d.c. plasma chemical vapour deposition

The internal stress in diamond films formed by d.c. plasma chemical vapour deposition was analysed as a function of discharge current density and grain size. Experimental results showed that the internal stress in the films is very sensitive to the deposition conditions. The origin of the internal s...

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Veröffentlicht in:	Thin solid films 1992-08, Vol.215 (2), p.174-178
Hauptverfasser:	Wanlu, Wang, Kejun, Liao, Jinying, Gao, Aimin, Liu
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physical properties of thin films, nonelectronic Physics Solid surfaces and solid-solid interfaces Surface energy thermodynamic properties Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	The internal stress in diamond films formed by d.c. plasma chemical vapour deposition was analysed as a function of discharge current density and grain size. Experimental results showed that the internal stress in the films is very sensitive to the deposition conditions. The origin of the internal stress may be ascribed to amorphous carbon, hydrogen and grain boundaries etc. in the films.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(92)90433-C