Normal incidence intersubband optical transition in GaSb/InAs superlattices

A novel intersubband optical transition, incorporating interband and p-type intersubband optical transition mechanisms, in a suitably designed GaSb/InAs superlattice is proposed. Such a structure utilizes the strong mixing of GaSb light-hole band with InAs conduction band and the heavy-hole to light...

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Veröffentlicht in:	Applied physics letters 1992-08, Vol.61 (5), p.509-511
Hauptverfasser:	CHEN, H. H, HOUNG, M. P, WANG, Y. H, YIA-CHUNG CHANG
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Beschreibung
Zusammenfassung:	A novel intersubband optical transition, incorporating interband and p-type intersubband optical transition mechanisms, in a suitably designed GaSb/InAs superlattice is proposed. Such a structure utilizes the strong mixing of GaSb light-hole band with InAs conduction band and the heavy-hole to light-hole intervalence-subband transition in the GaSb/InAs superlattice to obtain a strong normal incidence photoabsorption coefficient (over 8.0×104 cm−1) at a wavelength near 10 μm.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107870