In situ phosphorus doped alpha silicon films for micromechanical structures
Two amorphous silicon films have been studied for potential application for micromechanical structures. Good conductivity with minimum thermal budgets was achieved with an in situ phosphorus doped, plasma enhanced, alpha silicon film deposited at 350 °C. Some cantiliver structures were demonstrated...
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| Veröffentlicht in: | Thin solid films 1992-01, Vol.214 (2), p.260-263 |
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| container_end_page | 263 |
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| container_issue | 2 |
| container_start_page | 260 |
| container_title | Thin solid films |
| container_volume | 214 |
| creator | Flowers, D. Ristic, Lj Hughes, H.G. |
| description | Two amorphous silicon films have been studied for potential application for micromechanical structures. Good conductivity with minimum thermal budgets was achieved with an
in situ phosphorus doped, plasma enhanced, alpha silicon film deposited at 350 °C. Some cantiliver structures were demonstrated for possible application to sensors that could be made on the same chip with signal processing circuitry. |
| doi_str_mv | 10.1016/0040-6090(92)90780-F |
| format | Article |
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| ispartof | Thin solid films, 1992-01, Vol.214 (2), p.260-263 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physical properties of thin films, nonelectronic Physics Solid surfaces and solid-solid interfaces Surface energy thermodynamic properties Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | In situ phosphorus doped alpha silicon films for micromechanical structures |
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