In situ phosphorus doped alpha silicon films for micromechanical structures

Two amorphous silicon films have been studied for potential application for micromechanical structures. Good conductivity with minimum thermal budgets was achieved with an in situ phosphorus doped, plasma enhanced, alpha silicon film deposited at 350 °C. Some cantiliver structures were demonstrated...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 1992-01, Vol.214 (2), p.260-263
Hauptverfasser:	Flowers, D., Ristic, Lj, Hughes, H.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physical properties of thin films, nonelectronic Physics Solid surfaces and solid-solid interfaces Surface energy thermodynamic properties Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Two amorphous silicon films have been studied for potential application for micromechanical structures. Good conductivity with minimum thermal budgets was achieved with an in situ phosphorus doped, plasma enhanced, alpha silicon film deposited at 350 °C. Some cantiliver structures were demonstrated for possible application to sensors that could be made on the same chip with signal processing circuitry.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(92)90780-F