Nodular growth in thin films: Preparation and transmission electron microscopy characterization in CoCr layers on silicon substrates

The structure of nodular defects in thin CoCr films on silicon substrates was studied using plane-view and cross-sectional transmission electron microscopy. Cross-sectional transmission electron micrographs reveal the habit as well as the morphology of the nodular defects. They consist of conically...

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Veröffentlicht in:	Thin solid films 1990-07, Vol.188 (2), p.335-340
Hauptverfasser:	Mattheis, R., Thrum, F., Anklam, H.-J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	The structure of nodular defects in thin CoCr films on silicon substrates was studied using plane-view and cross-sectional transmission electron microscopy. Cross-sectional transmission electron micrographs reveal the habit as well as the morphology of the nodular defects. They consist of conically shaped close-packed h.c.p. crystallites with an open or low-density boundary to the surrounding film which consists of well formed columnar h.c.p. crystallites.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(90)90296-P