MOVPE of narrow and wide gap II–VI compounds
The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as iPr 2Te, tBu 2Te, Me(allylTe and (allyl) 2Te for low temperature growth, substrates including CdZnTe, CdT...
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| Veröffentlicht in: | Journal of crystal growth 1990-04, Vol.101 (1), p.1-13 |
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| container_title | Journal of crystal growth |
| container_volume | 101 |
| creator | Mullin, J.B. Cole-Hamilton, D.J. Irvine, S.J.C. Hails, J.E. Giess, J. Gough, J.S. |
| description | The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as
iPr
2Te,
tBu
2Te, Me(allylTe and (allyl)
2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition. |
| doi_str_mv | 10.1016/0022-0248(90)90929-F |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25758637</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>002202489090929F</els_id><sourcerecordid>25758637</sourcerecordid><originalsourceid>FETCH-LOGICAL-c430t-77839686e4c9cd582d686931b8976245ec92f2efbef62474008e460f49631cdb3</originalsourceid><addsrcrecordid>eNp9kM1KAzEUhYMoWKtv4GIWIrqYmr-ZTDaClFYHKnWh3YY0PxKZTsaktbjzHXxDn8TUli5dXQ73O_dyDgDnCA4QROUNhBjnENPqisNrDjnm-fgA9FDFSF6k5SHo7ZFjcBLjG4TJh2APDB6ns6dR5m3WyhD8OpOtztZOm-xVdlld_3x9z-pM-UXnV62Op-DIyiaas93sg5fx6Hn4kE-m9_XwbpIrSuAyZ6wivKxKQxVXuqiwToITNK84KzEtjOLYYmPnxibJKISVoSW0lJcEKT0nfXC5vdsF_74ycSkWLirTNLI1fhUFLlhRlYQlkG5BFXyMwVjRBbeQ4VMgKDbliE1ysUkuOBR_5Yhxsl3s7suoZGODbJWLey8lqOAMJ-x2i5mU9cOZIKJyplVGu2DUUmjv_v_zC9XAdZM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25758637</pqid></control><display><type>article</type><title>MOVPE of narrow and wide gap II–VI compounds</title><source>Access via ScienceDirect (Elsevier)</source><creator>Mullin, J.B. ; Cole-Hamilton, D.J. ; Irvine, S.J.C. ; Hails, J.E. ; Giess, J. ; Gough, J.S.</creator><creatorcontrib>Mullin, J.B. ; Cole-Hamilton, D.J. ; Irvine, S.J.C. ; Hails, J.E. ; Giess, J. ; Gough, J.S.</creatorcontrib><description>The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as
iPr
2Te,
tBu
2Te, Me(allylTe and (allyl)
2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/0022-0248(90)90929-F</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of crystal growth, 1990-04, Vol.101 (1), p.1-13</ispartof><rights>1989</rights><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-77839686e4c9cd582d686931b8976245ec92f2efbef62474008e460f49631cdb3</citedby><cites>FETCH-LOGICAL-c430t-77839686e4c9cd582d686931b8976245ec92f2efbef62474008e460f49631cdb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0022-0248(90)90929-F$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4315972$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mullin, J.B.</creatorcontrib><creatorcontrib>Cole-Hamilton, D.J.</creatorcontrib><creatorcontrib>Irvine, S.J.C.</creatorcontrib><creatorcontrib>Hails, J.E.</creatorcontrib><creatorcontrib>Giess, J.</creatorcontrib><creatorcontrib>Gough, J.S.</creatorcontrib><title>MOVPE of narrow and wide gap II–VI compounds</title><title>Journal of crystal growth</title><description>The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as
iPr
2Te,
tBu
2Te, Me(allylTe and (allyl)
2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhYMoWKtv4GIWIrqYmr-ZTDaClFYHKnWh3YY0PxKZTsaktbjzHXxDn8TUli5dXQ73O_dyDgDnCA4QROUNhBjnENPqisNrDjnm-fgA9FDFSF6k5SHo7ZFjcBLjG4TJh2APDB6ns6dR5m3WyhD8OpOtztZOm-xVdlld_3x9z-pM-UXnV62Op-DIyiaas93sg5fx6Hn4kE-m9_XwbpIrSuAyZ6wivKxKQxVXuqiwToITNK84KzEtjOLYYmPnxibJKISVoSW0lJcEKT0nfXC5vdsF_74ycSkWLirTNLI1fhUFLlhRlYQlkG5BFXyMwVjRBbeQ4VMgKDbliE1ysUkuOBR_5Yhxsl3s7suoZGODbJWLey8lqOAMJ-x2i5mU9cOZIKJyplVGu2DUUmjv_v_zC9XAdZM</recordid><startdate>19900401</startdate><enddate>19900401</enddate><creator>Mullin, J.B.</creator><creator>Cole-Hamilton, D.J.</creator><creator>Irvine, S.J.C.</creator><creator>Hails, J.E.</creator><creator>Giess, J.</creator><creator>Gough, J.S.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19900401</creationdate><title>MOVPE of narrow and wide gap II–VI compounds</title><author>Mullin, J.B. ; Cole-Hamilton, D.J. ; Irvine, S.J.C. ; Hails, J.E. ; Giess, J. ; Gough, J.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-77839686e4c9cd582d686931b8976245ec92f2efbef62474008e460f49631cdb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mullin, J.B.</creatorcontrib><creatorcontrib>Cole-Hamilton, D.J.</creatorcontrib><creatorcontrib>Irvine, S.J.C.</creatorcontrib><creatorcontrib>Hails, J.E.</creatorcontrib><creatorcontrib>Giess, J.</creatorcontrib><creatorcontrib>Gough, J.S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mullin, J.B.</au><au>Cole-Hamilton, D.J.</au><au>Irvine, S.J.C.</au><au>Hails, J.E.</au><au>Giess, J.</au><au>Gough, J.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MOVPE of narrow and wide gap II–VI compounds</atitle><jtitle>Journal of crystal growth</jtitle><date>1990-04-01</date><risdate>1990</risdate><volume>101</volume><issue>1</issue><spage>1</spage><epage>13</epage><pages>1-13</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as
iPr
2Te,
tBu
2Te, Me(allylTe and (allyl)
2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/0022-0248(90)90929-F</doi><tpages>13</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 1990-04, Vol.101 (1), p.1-13 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25758637 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | MOVPE of narrow and wide gap II–VI compounds |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T17%3A01%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=MOVPE%20of%20narrow%20and%20wide%20gap%20II%E2%80%93VI%20compounds&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Mullin,%20J.B.&rft.date=1990-04-01&rft.volume=101&rft.issue=1&rft.spage=1&rft.epage=13&rft.pages=1-13&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/0022-0248(90)90929-F&rft_dat=%3Cproquest_cross%3E25758637%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25758637&rft_id=info:pmid/&rft_els_id=002202489090929F&rfr_iscdi=true |