MOVPE of narrow and wide gap II–VI compounds

The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as iPr 2Te, tBu 2Te, Me(allylTe and (allyl) 2Te for low temperature growth, substrates including CdZnTe, CdT...

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Veröffentlicht in:	Journal of crystal growth 1990-04, Vol.101 (1), p.1-13
Hauptverfasser:	Mullin, J.B., Cole-Hamilton, D.J., Irvine, S.J.C., Hails, J.E., Giess, J., Gough, J.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The development of high quality II–VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as iPr 2Te, tBu 2Te, Me(allylTe and (allyl) 2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(90)90929-F