An investigation of polysilicon emitter interface characteristics

An investigation of polysilicon emitter interface characteristics

The influence of the border of poly-mono silicon to volt-pharada characteristics of the emitter p-n junctions of bipolar transistors is experimentally found. The dependency of the effective capacity of the border from the voltage is obtained. Using the analysis of the static volt-current characteris...

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Veröffentlicht in:Atomnaâ ėnergiâ 1992-01 (6), p.36-39
Hauptverfasser: Kolomoets, G P, Levinzon, D I, Nazarenko, V N, Tkachenko, N N
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container_title Atomnaâ ėnergiâ
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creator Kolomoets, G P
Levinzon, D I
Nazarenko, V N
Tkachenko, N N
description The influence of the border of poly-mono silicon to volt-pharada characteristics of the emitter p-n junctions of bipolar transistors is experimentally found. The dependency of the effective capacity of the border from the voltage is obtained. Using the analysis of the static volt-current characteristics of the transistor the current dependency of the border resistance is investigated.
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title An investigation of polysilicon emitter interface characteristics
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