An investigation of polysilicon emitter interface characteristics
The influence of the border of poly-mono silicon to volt-pharada characteristics of the emitter p-n junctions of bipolar transistors is experimentally found. The dependency of the effective capacity of the border from the voltage is obtained. Using the analysis of the static volt-current characteris...
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| Veröffentlicht in: | Atomnaâ ėnergiâ 1992-01 (6), p.36-39 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | rus |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The influence of the border of poly-mono silicon to volt-pharada characteristics of the emitter p-n junctions of bipolar transistors is experimentally found. The dependency of the effective capacity of the border from the voltage is obtained. Using the analysis of the static volt-current characteristics of the transistor the current dependency of the border resistance is investigated. |
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| ISSN: | 0004-7163 |