Influence of Oxygen Partial Pressure on YBa sub 2 Cu sub 3 O sub 7--x Film Crystallization by Magnetron Sputtering

Influence of Oxygen Partial Pressure on YBa sub 2 Cu sub 3 O sub 7--x Film Crystallization by Magnetron Sputtering

Experimental results of research on the influence of oxygen partial pressure on crystal structure and elctrophysical properties of YBa sub 2 Cu sub 3 O sub 7--x films deposited by magnetron sputtering are reported. It is found that the change of O partial pressure results in two different mechanisms...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-06, Vol.B14 (1), p.93-94
Hauptverfasser: Kotelyansky, I M, Kravchenko, V B, Luzanov, V A, Sobolev, A T
Format: Artikel
Sprache:eng
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Zusammenfassung:Experimental results of research on the influence of oxygen partial pressure on crystal structure and elctrophysical properties of YBa sub 2 Cu sub 3 O sub 7--x films deposited by magnetron sputtering are reported. It is found that the change of O partial pressure results in two different mechanisms of YBa sub 2 Cu sub 3 O sub 7--x film growth.
ISSN:0921-5107