Negative differential conductance observed in a lateral double constriction device

Negative differential conductance observed in a lateral double constriction device

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the o...

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Veröffentlicht in:Applied physics letters 1992-11, Vol.61 (20), p.2425-2427
Hauptverfasser: WU, J. C, WYBOURNE, M. N, BERVEN, C, GOODNICK, S. M, SMITH, D. D
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108186