The influence of impurity concentration on exciton photoluminescence in GaAs and InP

We report an investigation of the exciton photoluminescence (PL) spectra of high-purity nominally n-type GaAs and InP layers, grown by metalorganic vapour phase epitaxy. The results are discussed in terms of exciton-polariton kinetics. The ratio of the integrated emission intensities of neutral dono...

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Veröffentlicht in:	Semiconductor science and technology 1992-11, Vol.7 (11), p.1400-1406
Hauptverfasser:	Pen, H F, Dreissen, F A J M, Olsthoorn, S M, Giling, L J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Beschreibung
Zusammenfassung:	We report an investigation of the exciton photoluminescence (PL) spectra of high-purity nominally n-type GaAs and InP layers, grown by metalorganic vapour phase epitaxy. The results are discussed in terms of exciton-polariton kinetics. The ratio of the integrated emission intensities of neutral donor-bound exciton (D super(0), X) transitions and free exciton-polariton (FX) transitions r sub(DF) = /(D super(0), X)//(FX) shows a sublinear dependence upon neutral donor concentration n sub(D) super(0) deduced from 77 K Hall measurements. This relationship is particularly useful for estimating carrier concentrations in high-purity materials, which cannot be characterized by Hall measurements due to depletion.
ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/7/11/020