Micromachining and device transplantation using focused ion beam

During the past ten years, a number of focused ion beam (FIB) applications in microelectronics have been demonstrated and steadily identified. In this paper, we will review FIB micromachining and device transplantation, in which processes of FIB sputtering, redeposition, and/or FIB-assisted depositi...

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Veröffentlicht in:Japanese Journal of Applied Physics 1990-10, Vol.29 (10), p.2283-2287
Hauptverfasser: ISHITANI, T, OHNISHI, T, KAWANAMI, Y
Format: Artikel
Sprache:eng
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Zusammenfassung:During the past ten years, a number of focused ion beam (FIB) applications in microelectronics have been demonstrated and steadily identified. In this paper, we will review FIB micromachining and device transplantation, in which processes of FIB sputtering, redeposition, and/or FIB-assisted deposition are well utilized. The FIB 3-dimensional micromachining is demonstrated with the aid of a sample rotator. Good prospects in the device transplantation are identified as a new high-resolution method for microdevice assembly and device repair. These FIB applications can be visually performed using scanning ion microscope (SIM) images. Specifications of the FIB apparatus for these applications and FIB micromachining simulation are also discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.2283