Modification of the dielectric properties of parylene films by ion implantation

Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also incr...

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Veröffentlicht in:Surface & coatings technology 1990, Vol.41 (2), p.205-209
Hauptverfasser: Binder, Michael, Mammone, Robert J.
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container_title Surface & coatings technology
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creator Binder, Michael
Mammone, Robert J.
description Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.
doi_str_mv 10.1016/0257-8972(90)90168-C
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25730446</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>025789729090168C</els_id><sourcerecordid>25730446</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-e7f79736997b469a136f0ec7f9fdaf1fae4d727ba3353af46cdaf91392f4d0bb3</originalsourceid><addsrcrecordid>eNp9kEtLAzEUhYMoWKv_wMUsRHQxmkzSZLIRZPAFlW50HTKZG4zMyyQV-u_NtKVLV4Gbc86950PokuA7ggm_x8VC5KUUxY3EtzJNyrw6QjNSCplTysQxmh0kp-gshG-MMRGSzdDqfWicdUZHN_TZYLP4BVnjoAUTvTPZ6IcRfHQQps9R-00LPWTWtV3I6k02uVw3trqP24hzdGJ1G-Bi_87R5_PTR_WaL1cvb9XjMjeUs5iDsEIKyqUUNeNSE8otBiOstI22xGpgjShErSldUG0ZN2ksCZWFZQ2uazpH17vcdODPGkJUnQsG2nQIDOugUl2KGeNJyHZC44cQPFg1etelHopgNdFTExo1oVESqy09VSXb1T5fB6Nb63VvXDh4eckWBLMke9jJIHX9deBVMA56A43ziaBqBvf_nj9Q_ITK</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25730446</pqid></control><display><type>article</type><title>Modification of the dielectric properties of parylene films by ion implantation</title><source>Access via ScienceDirect (Elsevier)</source><creator>Binder, Michael ; Mammone, Robert J.</creator><creatorcontrib>Binder, Michael ; Mammone, Robert J.</creatorcontrib><description>Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/0257-8972(90)90168-C</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Metals, semimetals and alloys ; Metals. Metallurgy ; Nonmetallic coatings ; Physics ; Production techniques ; Specific materials ; Surface treatment</subject><ispartof>Surface &amp; coatings technology, 1990, Vol.41 (2), p.205-209</ispartof><rights>1990</rights><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-e7f79736997b469a136f0ec7f9fdaf1fae4d727ba3353af46cdaf91392f4d0bb3</citedby><cites>FETCH-LOGICAL-c364t-e7f79736997b469a136f0ec7f9fdaf1fae4d727ba3353af46cdaf91392f4d0bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0257-8972(90)90168-C$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,782,786,3552,4026,27930,27931,27932,46002</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=6845104$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Binder, Michael</creatorcontrib><creatorcontrib>Mammone, Robert J.</creatorcontrib><title>Modification of the dielectric properties of parylene films by ion implantation</title><title>Surface &amp; coatings technology</title><description>Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Metals, semimetals and alloys</subject><subject>Metals. Metallurgy</subject><subject>Nonmetallic coatings</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Specific materials</subject><subject>Surface treatment</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKv_wMUsRHQxmkzSZLIRZPAFlW50HTKZG4zMyyQV-u_NtKVLV4Gbc86950PokuA7ggm_x8VC5KUUxY3EtzJNyrw6QjNSCplTysQxmh0kp-gshG-MMRGSzdDqfWicdUZHN_TZYLP4BVnjoAUTvTPZ6IcRfHQQps9R-00LPWTWtV3I6k02uVw3trqP24hzdGJ1G-Bi_87R5_PTR_WaL1cvb9XjMjeUs5iDsEIKyqUUNeNSE8otBiOstI22xGpgjShErSldUG0ZN2ksCZWFZQ2uazpH17vcdODPGkJUnQsG2nQIDOugUl2KGeNJyHZC44cQPFg1etelHopgNdFTExo1oVESqy09VSXb1T5fB6Nb63VvXDh4eckWBLMke9jJIHX9deBVMA56A43ziaBqBvf_nj9Q_ITK</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>Binder, Michael</creator><creator>Mammone, Robert J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1990</creationdate><title>Modification of the dielectric properties of parylene films by ion implantation</title><author>Binder, Michael ; Mammone, Robert J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-e7f79736997b469a136f0ec7f9fdaf1fae4d727ba3353af46cdaf91392f4d0bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Metals, semimetals and alloys</topic><topic>Metals. Metallurgy</topic><topic>Nonmetallic coatings</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Specific materials</topic><topic>Surface treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Binder, Michael</creatorcontrib><creatorcontrib>Mammone, Robert J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface &amp; coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Binder, Michael</au><au>Mammone, Robert J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modification of the dielectric properties of parylene films by ion implantation</atitle><jtitle>Surface &amp; coatings technology</jtitle><date>1990</date><risdate>1990</risdate><volume>41</volume><issue>2</issue><spage>205</spage><epage>209</epage><pages>205-209</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0257-8972(90)90168-C</doi><tpages>5</tpages></addata></record>
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subjects Applied sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Metals. Metallurgy
Nonmetallic coatings
Physics
Production techniques
Specific materials
Surface treatment
title Modification of the dielectric properties of parylene films by ion implantation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T17%3A32%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modification%20of%20the%20dielectric%20properties%20of%20parylene%20films%20by%20ion%20implantation&rft.jtitle=Surface%20&%20coatings%20technology&rft.au=Binder,%20Michael&rft.date=1990&rft.volume=41&rft.issue=2&rft.spage=205&rft.epage=209&rft.pages=205-209&rft.issn=0257-8972&rft.eissn=1879-3347&rft.coden=SCTEEJ&rft_id=info:doi/10.1016/0257-8972(90)90168-C&rft_dat=%3Cproquest_cross%3E25730446%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25730446&rft_id=info:pmid/&rft_els_id=025789729090168C&rfr_iscdi=true