Modification of the dielectric properties of parylene films by ion implantation
Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also incr...
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| Veröffentlicht in: | Surface & coatings technology 1990, Vol.41 (2), p.205-209 |
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| container_title | Surface & coatings technology |
| container_volume | 41 |
| creator | Binder, Michael Mammone, Robert J. |
| description | Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10
16 Cl
+ or Ar
+ ions cm
-2. Bulk conductivity and dielectric losses also increased with ion irradiation. |
| doi_str_mv | 10.1016/0257-8972(90)90168-C |
| format | Article |
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16 Cl
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16 Cl
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| fulltext | fulltext |
| identifier | ISSN: 0257-8972 |
| ispartof | Surface & coatings technology, 1990, Vol.41 (2), p.205-209 |
| issn | 0257-8972 1879-3347 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25730446 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals, semimetals and alloys Metals. Metallurgy Nonmetallic coatings Physics Production techniques Specific materials Surface treatment |
| title | Modification of the dielectric properties of parylene films by ion implantation |
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