Modification of the dielectric properties of parylene films by ion implantation

Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also incr...

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Veröffentlicht in:	Surface & coatings technology 1990, Vol.41 (2), p.205-209
Hauptverfasser:	Binder, Michael, Mammone, Robert J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals, semimetals and alloys Metals. Metallurgy Nonmetallic coatings Physics Production techniques Specific materials Surface treatment
Online-Zugang:	Volltext
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Zusammenfassung:	Dielectric properties of normally insulating Parylene C films were measured before and after chloride and argon ion irradiation. Bulk dielectric constants increased from 2.8 to approximately 15 - 20 after an ion flux of 10 16 Cl + or Ar + ions cm -2. Bulk conductivity and dielectric losses also increased with ion irradiation.
ISSN:	0257-8972 1879-3347
DOI:	10.1016/0257-8972(90)90168-C