Lateral transport in GaAs-(Al,Ga)As superlattices investigated by transient grating measurements

The recombination lifetime and the lateral diffusion coefficient for free carrier motion parallel to the interfaces at room temperature were measured by the transient grating technique. Two GaAs-Ga 1-xAl xAs superlattices with nearly identical quantum well thickness but different barrier properties...

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Veröffentlicht in:	Solid state communications 1992, Vol.81 (6), p.467-471
Hauptverfasser:	Weinert, H., Kolenda, J., Petrauskas, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The recombination lifetime and the lateral diffusion coefficient for free carrier motion parallel to the interfaces at room temperature were measured by the transient grating technique. Two GaAs-Ga 1-xAl xAs superlattices with nearly identical quantum well thickness but different barrier properties were investigated. It was found that the lateral mobility of free carriers decreases with decreasing tunneling probability through the barriers.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/0038-1098(92)90594-Y