Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode
We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex...
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| Veröffentlicht in: | Journal of applied physics 1992-04, Vol.71 (7), p.3614-3616 |
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| container_end_page | 3616 |
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| container_issue | 7 |
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| container_title | Journal of applied physics |
| container_volume | 71 |
| creator | KAPSER, K DEIMEL, P. P |
| description | We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses. |
| doi_str_mv | 10.1063/1.350918 |
| format | Article |
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P</creator><creatorcontrib>KAPSER, K ; DEIMEL, P. P</creatorcontrib><description>We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.350918</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Integrated optoelectronics. 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P</creatorcontrib><title>Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode</title><title>Journal of applied physics</title><description>We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated optoelectronics. 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P</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19920401</creationdate><title>Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode</title><author>KAPSER, K ; DEIMEL, P. P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c202t-124d144eb6cdea13edf282f7b9bc8e103edb95106605232cf7aee07fbfd6ab773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Optical and optoelectronic circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAPSER, K</creatorcontrib><creatorcontrib>DEIMEL, P. P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAPSER, K</au><au>DEIMEL, P. P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode</atitle><jtitle>Journal of applied physics</jtitle><date>1992-04-01</date><risdate>1992</risdate><volume>71</volume><issue>7</issue><spage>3614</spage><epage>3616</epage><pages>3614-3616</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.350918</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1992-04, Vol.71 (7), p.3614-3616 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25701887 |
| source | AIP Digital Archive |
| subjects | Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optoelectronics. Optoelectronic circuits Optical and optoelectronic circuits |
| title | Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode |
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