Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode

We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1992-04, Vol.71 (7), p.3614-3616
Hauptverfasser:	KAPSER, K, DEIMEL, P. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optoelectronics. Optoelectronic circuits Optical and optoelectronic circuits
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We have measured the absorption coefficient at λ=850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.350918