Ultralow threshold multiquantum well InGaAs lasers

Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1992-04, Vol.60 (15), p.1782-1784
Hauptverfasser:	CHEN, T. R, ZHAO, B, ZHUANG, Y. H, YARIV, A, UNGAR, J. E, OH, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107186