Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC film...

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Veröffentlicht in:	Applied physics letters 1990-04, Vol.56 (15), p.1442-1444
Hauptverfasser:	Powell, J. A., Larkin, D. J., Matus, L. G., Choyke, W. J., Bradshaw, J. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Solid-State Physics
Online-Zugang:	Volltext
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