Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.