Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain

Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /sub gm///sub gd/ of 125 and a C/sub gs//C/sub gd/ r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and guided wave letters 1992-02, Vol.2 (2), p.46-48
Hauptverfasser: Wenger, J., Narozny, P., Dambkes, H., Splettstosser, J., Werres, C.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /sub gm///sub gd/ of 125 and a C/sub gs//C/sub gd/ ratio of 45. The current gain cutoff frequency f/sub T/ is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain.< >
ISSN:1051-8207
1558-2329
DOI:10.1109/75.122405