Highly stable microwave performance of InP/InGaAs HIGFETs

Highly stable microwave performance of InP/InGaAs HIGFETs

The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these device...

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Veröffentlicht in:IEEE transactions on electron devices 1990-08, Vol.37 (8), p.1916-1917
Hauptverfasser: Martin, E.A., Aina, O.A., Iliadis, A.A., Mattingly, M.R., Hempfling, E.
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
FETs
Heterojunctions
Indium gallium arsenide
Indium phosphide
Insulation
Microwave devices
Plasma chemistry
Plasma devices
Plasma stability
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container_end_page 1917
container_issue 8
container_start_page 1916
container_title IEEE transactions on electron devices
container_volume 37
creator Martin, E.A.
Aina, O.A.
Iliadis, A.A.
Mattingly, M.R.
Hempfling, E.
description The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.< >
doi_str_mv 10.1109/16.57144
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25687894</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>57144</ieee_id><sourcerecordid>25687894</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-f5571de47ef711ce4e29d8ec28bf4c1df5dc592a66cde2331824947e725ea9e03</originalsourceid><addsrcrecordid>eNqN0UtLw0AQAOBFFKxV8OotJ_GSNrPvPZaibaCgBz0v282sRvKo2Vbpvzc14tWehpn5GIYZQq4hmwBkZgpyIhRwfkJGIIRKjeTylIyyDHRqmGbn5CLG9z6VnNMRMcvy9a3aJ3Hr1hUmdem79st9YrLBLrRd7RqPSRuSvHma5s3CzWKyzBcP98_xkpwFV0W8-o1j8tKX58t09bjI57NV6plU2zT0S0CBXGFQAB45UlNo9FSvA_dQBFF4YaiT0hdIGQNNuem1ogKdwYyNye0wd9O1HzuMW1uX0WNVuQbbXbRUKyalgiMgY6I_w_9QSK204UdBKeCw490A--vF2GGwm66sXbe3kNnDWyxI-_OWnt4MtETEPzb0vgFIhoTn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25686510</pqid></control><display><type>article</type><title>Highly stable microwave performance of InP/InGaAs HIGFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Martin, E.A. ; Aina, O.A. ; Iliadis, A.A. ; Mattingly, M.R. ; Hempfling, E.</creator><creatorcontrib>Martin, E.A. ; Aina, O.A. ; Iliadis, A.A. ; Mattingly, M.R. ; Hempfling, E.</creatorcontrib><description>The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.&lt; &gt;</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.57144</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fabrication ; FETs ; Heterojunctions ; Indium gallium arsenide ; Indium phosphide ; Insulation ; Microwave devices ; Plasma chemistry ; Plasma devices ; Plasma stability</subject><ispartof>IEEE transactions on electron devices, 1990-08, Vol.37 (8), p.1916-1917</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-f5571de47ef711ce4e29d8ec28bf4c1df5dc592a66cde2331824947e725ea9e03</citedby><cites>FETCH-LOGICAL-c367t-f5571de47ef711ce4e29d8ec28bf4c1df5dc592a66cde2331824947e725ea9e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/57144$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/57144$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Martin, E.A.</creatorcontrib><creatorcontrib>Aina, O.A.</creatorcontrib><creatorcontrib>Iliadis, A.A.</creatorcontrib><creatorcontrib>Mattingly, M.R.</creatorcontrib><creatorcontrib>Hempfling, E.</creatorcontrib><title>Highly stable microwave performance of InP/InGaAs HIGFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.&lt; &gt;</description><subject>Fabrication</subject><subject>FETs</subject><subject>Heterojunctions</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Insulation</subject><subject>Microwave devices</subject><subject>Plasma chemistry</subject><subject>Plasma devices</subject><subject>Plasma stability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqN0UtLw0AQAOBFFKxV8OotJ_GSNrPvPZaibaCgBz0v282sRvKo2Vbpvzc14tWehpn5GIYZQq4hmwBkZgpyIhRwfkJGIIRKjeTylIyyDHRqmGbn5CLG9z6VnNMRMcvy9a3aJ3Hr1hUmdem79st9YrLBLrRd7RqPSRuSvHma5s3CzWKyzBcP98_xkpwFV0W8-o1j8tKX58t09bjI57NV6plU2zT0S0CBXGFQAB45UlNo9FSvA_dQBFF4YaiT0hdIGQNNuem1ogKdwYyNye0wd9O1HzuMW1uX0WNVuQbbXbRUKyalgiMgY6I_w_9QSK204UdBKeCw490A--vF2GGwm66sXbe3kNnDWyxI-_OWnt4MtETEPzb0vgFIhoTn</recordid><startdate>19900801</startdate><enddate>19900801</enddate><creator>Martin, E.A.</creator><creator>Aina, O.A.</creator><creator>Iliadis, A.A.</creator><creator>Mattingly, M.R.</creator><creator>Hempfling, E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>19900801</creationdate><title>Highly stable microwave performance of InP/InGaAs HIGFETs</title><author>Martin, E.A. ; Aina, O.A. ; Iliadis, A.A. ; Mattingly, M.R. ; Hempfling, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-f5571de47ef711ce4e29d8ec28bf4c1df5dc592a66cde2331824947e725ea9e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Fabrication</topic><topic>FETs</topic><topic>Heterojunctions</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Insulation</topic><topic>Microwave devices</topic><topic>Plasma chemistry</topic><topic>Plasma devices</topic><topic>Plasma stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Martin, E.A.</creatorcontrib><creatorcontrib>Aina, O.A.</creatorcontrib><creatorcontrib>Iliadis, A.A.</creatorcontrib><creatorcontrib>Mattingly, M.R.</creatorcontrib><creatorcontrib>Hempfling, E.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martin, E.A.</au><au>Aina, O.A.</au><au>Iliadis, A.A.</au><au>Mattingly, M.R.</au><au>Hempfling, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly stable microwave performance of InP/InGaAs HIGFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-08-01</date><risdate>1990</risdate><volume>37</volume><issue>8</issue><spage>1916</spage><epage>1917</epage><pages>1916-1917</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/16.57144</doi><tpages>2</tpages></addata></record>
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subjects Fabrication
FETs
Heterojunctions
Indium gallium arsenide
Indium phosphide
Insulation
Microwave devices
Plasma chemistry
Plasma devices
Plasma stability
title Highly stable microwave performance of InP/InGaAs HIGFETs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T02%3A58%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20stable%20microwave%20performance%20of%20InP/InGaAs%20HIGFETs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Martin,%20E.A.&rft.date=1990-08-01&rft.volume=37&rft.issue=8&rft.spage=1916&rft.epage=1917&rft.pages=1916-1917&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.57144&rft_dat=%3Cproquest_RIE%3E25687894%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25686510&rft_id=info:pmid/&rft_ieee_id=57144&rfr_iscdi=true