Highly stable microwave performance of InP/InGaAs HIGFETs

Highly stable microwave performance of InP/InGaAs HIGFETs

The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these device...

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Veröffentlicht in:IEEE transactions on electron devices 1990-08, Vol.37 (8), p.1916-1917
Hauptverfasser: Martin, E.A., Aina, O.A., Iliadis, A.A., Mattingly, M.R., Hempfling, E.
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
FETs
Heterojunctions
Indium gallium arsenide
Indium phosphide
Insulation
Microwave devices
Plasma chemistry
Plasma devices
Plasma stability
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Zusammenfassung:The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57144