Life time evaluation of MOSFET in ULSIs using photon emission method

Life time evaluation of MOSFET in ULSIs using photon emission method

A method of estimating the lifetime of a MOSFET at the LSI chip level by using the photon emission is proposed. The relation between the photon count and the lifetime under AC stress was studied. The method is based on the theory that the lifetime of hot carrier degradation is described by a univers...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tsutsu, N., Uraoka, Y., Morii, T., Tsuji, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Hot carriers
Large scale integration
Life estimation
Life testing
MOSFET circuits
Optical microscopy
Stress
Ultra large scale integration
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of estimating the lifetime of a MOSFET at the LSI chip level by using the photon emission is proposed. The relation between the photon count and the lifetime under AC stress was studied. The method is based on the theory that the lifetime of hot carrier degradation is described by a universal curve with respect to the photon count at 200-nm wavelength. A quantitative estimation of lifetime was demonstrated. As an example of the application of this method, the lifetime of a CMOS microprocessor was estimated.< >
DOI:10.1109/ICMTS.1992.185946