GaAs-based opto-thyristor for pulsed power applications
An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was high...
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| Veröffentlicht in: | IEEE transactions on electron devices 1990-12, Vol.37 (12), p.2520-2525 |
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| container_end_page | 2525 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 37 |
| creator | Hur, J.H. Hadizad, P. Hummel, S.G. Dzurko, K.M. Dapkus, P.D. Fetterman, H.R. Gundersen, M.A. |
| description | An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< > |
| doi_str_mv | 10.1109/16.64528 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25683815</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>64528</ieee_id><sourcerecordid>28335468</sourcerecordid><originalsourceid>FETCH-LOGICAL-c335t-a3f72fe3dac1c2a77c904779abf841eaaef5a42b4588767dc85b17402e023ad53</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKvg1Vsvipet-U72WEqtQsGLnpfZbIKRbROTLdJ_765b9OhhGIb34Rl4EbomeE4ILh-InEsuqD5BEyKEKkrJ5SmaYEx0UTLNztFFzh_9KTmnE6TWsMhFDdk2sxC7UHTvh-RzF9LM9RP37ZDE8GXTDGJsvYHOh12-RGcO-uzquKfo7XH1unwqNi_r5-ViUxjGRFcAc4o6yxowxFBQypSYK1VC7TQnFsA6AZzWXGitpGqMFjVRHFOLKYNGsCm6G70xhc-9zV219dnYtoWdDftcUd3_4VL_D4oe0mQw3o-gSSHnZF0Vk99COlQEV0OFFZHVT4U9ent0QjbQugQ74_MfX0rKJR64m5Hz1trfeHR8A6jEd7A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25683815</pqid></control><display><type>article</type><title>GaAs-based opto-thyristor for pulsed power applications</title><source>IEEE Electronic Library (IEL)</source><creator>Hur, J.H. ; Hadizad, P. ; Hummel, S.G. ; Dzurko, K.M. ; Dapkus, P.D. ; Fetterman, H.R. ; Gundersen, M.A.</creator><creatorcontrib>Hur, J.H. ; Hadizad, P. ; Hummel, S.G. ; Dzurko, K.M. ; Dapkus, P.D. ; Fetterman, H.R. ; Gundersen, M.A.</creatorcontrib><description>An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.64528</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Gallium arsenide ; III-V semiconductor materials ; Optical materials ; Optical pulses ; Optical switches ; Other multijunction devices. Power transistors. Thyristors ; Photonic band gap ; Power semiconductor switches ; Pulse power systems ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Thyristors ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1990-12, Vol.37 (12), p.2520-2525</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-a3f72fe3dac1c2a77c904779abf841eaaef5a42b4588767dc85b17402e023ad53</citedby><cites>FETCH-LOGICAL-c335t-a3f72fe3dac1c2a77c904779abf841eaaef5a42b4588767dc85b17402e023ad53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/64528$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/64528$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19624608$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hur, J.H.</creatorcontrib><creatorcontrib>Hadizad, P.</creatorcontrib><creatorcontrib>Hummel, S.G.</creatorcontrib><creatorcontrib>Dzurko, K.M.</creatorcontrib><creatorcontrib>Dapkus, P.D.</creatorcontrib><creatorcontrib>Fetterman, H.R.</creatorcontrib><creatorcontrib>Gundersen, M.A.</creatorcontrib><title>GaAs-based opto-thyristor for pulsed power applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< ></description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>III-V semiconductor materials</subject><subject>Optical materials</subject><subject>Optical pulses</subject><subject>Optical switches</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Photonic band gap</subject><subject>Power semiconductor switches</subject><subject>Pulse power systems</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thyristors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKvg1Vsvipet-U72WEqtQsGLnpfZbIKRbROTLdJ_765b9OhhGIb34Rl4EbomeE4ILh-InEsuqD5BEyKEKkrJ5SmaYEx0UTLNztFFzh_9KTmnE6TWsMhFDdk2sxC7UHTvh-RzF9LM9RP37ZDE8GXTDGJsvYHOh12-RGcO-uzquKfo7XH1unwqNi_r5-ViUxjGRFcAc4o6yxowxFBQypSYK1VC7TQnFsA6AZzWXGitpGqMFjVRHFOLKYNGsCm6G70xhc-9zV219dnYtoWdDftcUd3_4VL_D4oe0mQw3o-gSSHnZF0Vk99COlQEV0OFFZHVT4U9ent0QjbQugQ74_MfX0rKJR64m5Hz1trfeHR8A6jEd7A</recordid><startdate>19901201</startdate><enddate>19901201</enddate><creator>Hur, J.H.</creator><creator>Hadizad, P.</creator><creator>Hummel, S.G.</creator><creator>Dzurko, K.M.</creator><creator>Dapkus, P.D.</creator><creator>Fetterman, H.R.</creator><creator>Gundersen, M.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19901201</creationdate><title>GaAs-based opto-thyristor for pulsed power applications</title><author>Hur, J.H. ; Hadizad, P. ; Hummel, S.G. ; Dzurko, K.M. ; Dapkus, P.D. ; Fetterman, H.R. ; Gundersen, M.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-a3f72fe3dac1c2a77c904779abf841eaaef5a42b4588767dc85b17402e023ad53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>III-V semiconductor materials</topic><topic>Optical materials</topic><topic>Optical pulses</topic><topic>Optical switches</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Photonic band gap</topic><topic>Power semiconductor switches</topic><topic>Pulse power systems</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thyristors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hur, J.H.</creatorcontrib><creatorcontrib>Hadizad, P.</creatorcontrib><creatorcontrib>Hummel, S.G.</creatorcontrib><creatorcontrib>Dzurko, K.M.</creatorcontrib><creatorcontrib>Dapkus, P.D.</creatorcontrib><creatorcontrib>Fetterman, H.R.</creatorcontrib><creatorcontrib>Gundersen, M.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hur, J.H.</au><au>Hadizad, P.</au><au>Hummel, S.G.</au><au>Dzurko, K.M.</au><au>Dapkus, P.D.</au><au>Fetterman, H.R.</au><au>Gundersen, M.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaAs-based opto-thyristor for pulsed power applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-12-01</date><risdate>1990</risdate><volume>37</volume><issue>12</issue><spage>2520</spage><epage>2525</epage><pages>2520-2525</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.64528</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1990-12, Vol.37 (12), p.2520-2525 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Gallium arsenide III-V semiconductor materials Optical materials Optical pulses Optical switches Other multijunction devices. Power transistors. Thyristors Photonic band gap Power semiconductor switches Pulse power systems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thyristors Voltage |
| title | GaAs-based opto-thyristor for pulsed power applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T19%3A42%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaAs-based%20opto-thyristor%20for%20pulsed%20power%20applications&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Hur,%20J.H.&rft.date=1990-12-01&rft.volume=37&rft.issue=12&rft.spage=2520&rft.epage=2525&rft.pages=2520-2525&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.64528&rft_dat=%3Cproquest_RIE%3E28335468%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25683815&rft_id=info:pmid/&rft_ieee_id=64528&rfr_iscdi=true |