GaAs-based opto-thyristor for pulsed power applications

An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was high...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-12, Vol.37 (12), p.2520-2525
Hauptverfasser:	Hur, J.H., Hadizad, P., Hummel, S.G., Dzurko, K.M., Dapkus, P.D., Fetterman, H.R., Gundersen, M.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Gallium arsenide III-V semiconductor materials Optical materials Optical pulses Optical switches Other multijunction devices. Power transistors. Thyristors Photonic band gap Power semiconductor switches Pulse power systems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thyristors Voltage
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Zusammenfassung:	An optically gated GaAs bipolar junction thyristor, with a semi-insulating base layer, has been studied, and the characteristics of the device as a pulsed power switch are presented. The maximum DC blocking voltage of the device was larger than 800 V, the maximum peak current in pulsed mode was higher than 300 AA, and the current rate of rise was better than 1.5*10/sup 10/ A/s. These results demonstrate that GaAs-based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< >
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.64528