Lock-on effect in pulsed-power semiconductor switches

Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a ‘‘lock-on’’ effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward...

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Veröffentlicht in:	Journal of applied physics 1992-03, Vol.71 (6), p.3036-3038
Hauptverfasser:	GUNDERSEN, M. A, HUR, J. H, ZHAO, H, MYLES, C. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a ‘‘lock-on’’ effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.350988