Effects of X-ray mask structures and processes on X-ray mask distortion

We measured the distortion of 0.8 μm thick Ta absorbers patterned on 2 μm thick SiC membranes. The maximum membrane diameter was 60 mm, and the largest field-window was 40 × 40 mm. This paper describes the relationship between the distortion and the shape of the blocker pattern. We got a distortion...

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Veröffentlicht in:	Microelectronic engineering 1990, Vol.11 (1), p.309-312
Hauptverfasser:	Kondo, K., Yamada, M., Nakaishi, M., Kudo, J., Sugishima, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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