Effects of X-ray mask structures and processes on X-ray mask distortion
We measured the distortion of 0.8 μm thick Ta absorbers patterned on 2 μm thick SiC membranes. The maximum membrane diameter was 60 mm, and the largest field-window was 40 × 40 mm. This paper describes the relationship between the distortion and the shape of the blocker pattern. We got a distortion...
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Veröffentlicht in: | Microelectronic engineering 1990, Vol.11 (1), p.309-312 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We measured the distortion of 0.8 μm thick Ta absorbers patterned on 2 μm thick SiC membranes. The maximum membrane diameter was 60 mm, and the largest field-window was 40 × 40 mm. This paper describes the relationship between the distortion and the shape of the blocker pattern. We got a distortion less than 0.10 μm using a parallel-cross blocker and filling the area outside the blocker pattern with dummy patterns with the same pattern density as the cell region. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/0167-9317(90)90120-I |