Effects of X-ray mask structures and processes on X-ray mask distortion

We measured the distortion of 0.8 μm thick Ta absorbers patterned on 2 μm thick SiC membranes. The maximum membrane diameter was 60 mm, and the largest field-window was 40 × 40 mm. This paper describes the relationship between the distortion and the shape of the blocker pattern. We got a distortion...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 1990, Vol.11 (1), p.309-312
Hauptverfasser: Kondo, K., Yamada, M., Nakaishi, M., Kudo, J., Sugishima, K.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We measured the distortion of 0.8 μm thick Ta absorbers patterned on 2 μm thick SiC membranes. The maximum membrane diameter was 60 mm, and the largest field-window was 40 × 40 mm. This paper describes the relationship between the distortion and the shape of the blocker pattern. We got a distortion less than 0.10 μm using a parallel-cross blocker and filling the area outside the blocker pattern with dummy patterns with the same pattern density as the cell region.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90120-I