High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidth

High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidth

The authors have fabricated high-speed, low-threshold 1.3 mu m InGaAsP semi-insulating buried crescent lasers with a CW 3 dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. This is the highest 3 dB modulation bandwidth ever reported for the planar-type se...

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Veröffentlicht in:IEEE photonics technology letters 1992-04, Vol.4 (4), p.293-295
Hauptverfasser: Huang, R.-T., Wolf, D., Cheng, W.-H., Jiang, C.-L., Agarwal, R., Renner, D., Mar, A., Bowers, J.E.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Dielectrics
Etching
Fiber lasers
Indium phosphide
Laser radar
Masers
Semiconductor laser arrays
Temperature
Threshold current
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Zusammenfassung:The authors have fabricated high-speed, low-threshold 1.3 mu m InGaAsP semi-insulating buried crescent lasers with a CW 3 dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. This is the highest 3 dB modulation bandwidth ever reported for the planar-type semiconductor laser. These results were achieved by implementing a submicron photolithographic process in the channel etching to reduce the cavity width and a polyimide dielectric layer under the bonding pad area to minimize the electrical parasitics.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.127191