High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

The authors report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFETs). Devices with electron sheet concentrations of 3.8*10/sup 12/ cm/sup -2/ and low-field electron mobilities of 21000 cm/sup 2//V-s have been realized...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 1992-03, Vol.13 (3), p.164-166
Hauptverfasser:	Werking, J.D., Bolognesi, C.R., Chang, L.-D., Nguyen, C., Hu, E.L., Kroemer, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electron mobility Electronics Exact sciences and technology Fabrication FETs HEMTs Heterojunctions MODFETs Quantum well devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tellurium Temperature Transconductance Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The authors report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFETs). Devices with electron sheet concentrations of 3.8*10/sup 12/ cm/sup -2/ and low-field electron mobilities of 21000 cm/sup 2//V-s have been realized through the use of Te delta -doping sheets in the upper AlSb barrier. One device with a 2.0- mu m gate length showed a peak extrinsic transconductance of 473 mS/mm at room temperature. Gate leakage current, operating current density, and extrinsic transconductance were found to decrease with decreasing temperature.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.144998