Fundamental properties of high mobility InSbCdTe heterojunctions
Quantum transport measurements are reported on the high mobility, low carrier density (25500 cm 2V −1s −1 and 1.8 × 10 11 cm −2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field m...
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| Veröffentlicht in: | Surface science 1990-04, Vol.228 (1), p.542-546 |
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| container_title | Surface science |
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| creator | Greene, S.K. Singleton, J. Golding, T.D. Pepper, M. Langerak, C.J.G.M. Dinan, J.H. |
| description | Quantum transport measurements are reported on the high mobility, low carrier density (25500 cm
2V
−1s
−1 and 1.8 × 10
11 cm
−2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field magnetoresistance and electron
g-factor all point to the importance of a large zero-magnetic-field spin-splitting of the subband. which is estimated to be ∼ 10 meV. |
| doi_str_mv | 10.1016/0039-6028(90)90372-F |
| format | Article |
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2V
−1s
−1 and 1.8 × 10
11 cm
−2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field magnetoresistance and electron
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2V
−1s
−1 and 1.8 × 10
11 cm
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2V
−1s
−1 and 1.8 × 10
11 cm
−2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field magnetoresistance and electron
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| ispartof | Surface science, 1990-04, Vol.228 (1), p.542-546 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25670075 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics |
| title | Fundamental properties of high mobility InSbCdTe heterojunctions |
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