Fundamental properties of high mobility InSbCdTe heterojunctions

Quantum transport measurements are reported on the high mobility, low carrier density (25500 cm 2V −1s −1 and 1.8 × 10 11 cm −2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field m...

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Veröffentlicht in:	Surface science 1990-04, Vol.228 (1), p.542-546
Hauptverfasser:	Greene, S.K., Singleton, J., Golding, T.D., Pepper, M., Langerak, C.J.G.M., Dinan, J.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Quantum transport measurements are reported on the high mobility, low carrier density (25500 cm 2V −1s −1 and 1.8 × 10 11 cm −2), two-dimensional electron gas in InSbCdTe heterojunctions, realised as a result of improvements in growth techniques. Measurements of the quantum Hall effect, low-field magnetoresistance and electron g-factor all point to the importance of a large zero-magnetic-field spin-splitting of the subband. which is estimated to be ∼ 10 meV.
ISSN:	0039-6028 1879-2758
DOI:	10.1016/0039-6028(90)90372-F