High performance p-n junctions in the LPE Mn(x)Cd(y)Hg(1-x-y)Te layers

The electric properties of n(+)-p Mn(x)Cd(y)Hg(1-x-y)Te photodiodes with a cut-off wavelength of 3.3-3.8 microns at 77 K have been studied. The p-n junctions were created using ion implantation of boron into the p-type LPE epitaxial layers. Zero bias resistance-area product at T = 85 K is equal to 1.7 x 10 exp 7 ohm sq cm for the best sample (cut-off wavelength of 3.8 microns). For the material under study, this surpasses the values which have been reported up until now for a given spectral region, and is comparable with those of the best Cd(x)Hg(1-x)Te diodes with similar energy gap values. Mechanisms of current flow through the p-n junctions at T = 77-200 K without and under background illumination are discussed. (Author)