High temperature stability of CrSi(W)N films

The annealing characteristics of resistive Cr 74Si 24W 2N films were investigated at different nitrogen contents. In addition to studies of the stability up to about 450°C, the high temperature stability was measured at storage up to about 600°C, especially over the resistivity range 1800–2700 μΩ c...

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Veröffentlicht in:	Thin solid films 1992-12, Vol.221 (1), p.140-146
Hauptverfasser:	Brückner, W., Grieβmann, H., Mönch, J.-I., Schubert, G., Heinrich, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Metals. Metallurgy Physics
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Beschreibung
Zusammenfassung:	The annealing characteristics of resistive Cr 74Si 24W 2N films were investigated at different nitrogen contents. In addition to studies of the stability up to about 450°C, the high temperature stability was measured at storage up to about 600°C, especially over the resistivity range 1800–2700 μΩ cm. As to the resistance drift, continuation of the annealing processes in the internal part of the films dominates during temperature storage down to about 100 K below the annealing temperature. At lower temperatures surface processes prevail. In favourable cases the resistance drift at 540 °C 100 h amounts to about 3%.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(92)90807-N