Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration
We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ g=1.050 μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolera...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 1992-05, Vol.120 (1), p.140-144 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 144 |
|---|---|
| container_issue | 1 |
| container_start_page | 140 |
| container_title | Journal of crystal growth |
| container_volume | 120 |
| creator | Heinecke, H. Baur, B. Emeis, N. Schier, M. |
| description | We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ
g=1.050
μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolerance band was measured. The effect of the substrate misorientation is briefly discussed. Finally we present the data of the fully MOMBE grown structure for the vertical integration of waveguides and photodiodes. Dark currents vary between 130–600 pA and the device capacity is below 100 fF for 10 V reverse voltage for the selected device geometry. |
| doi_str_mv | 10.1016/0022-0248(92)90378-V |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25662523</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>002202489290378V</els_id><sourcerecordid>25662523</sourcerecordid><originalsourceid>FETCH-LOGICAL-c430t-3ada47dc3a444e1846e85131aba3b8ef09e30cf494c3aa4e200a30a245c441183</originalsourceid><addsrcrecordid>eNp9kEtPwzAQhC0EEuXxDzj4gBAcQtePpMkFqVRQKoHgAJyQLNfZUKM0KbZT1H-PS6seOc1hv5nVDCFnDK4ZsKwPwHkCXOaXBb8qQAzy5H2P9Fg-EEkaj_ukt0MOyZH3XwDRx6BHPsau_Qkz2lZ0Zj9n9Yp2ja1aN6eT5qU_1pNm6LfyQmcY0LU-uM6EzqGn0xV9en66vaPRQUtcWoPUNgE_nQ62bU7IQaVrj6dbPSZv93evo4fk8Xk8GQ0fEyMFhEToUstBaYSWUiLLZYZ5ygTTUy2mOVZQoABTyUJGREvkAFqA5jI1UjKWi2NysclduPa7Qx_U3HqDda0bbDuveJplPOUignIDmljDO6zUwtm5divFQK2nVOud1HonVXD1N6V6j7bzbb72RteV042xfudNeQoFsIjdbDCMXZcWnfLGYmOwtA5NUGVr___zC05Ihwc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25662523</pqid></control><display><type>article</type><title>Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration</title><source>Elsevier ScienceDirect Journals</source><creator>Heinecke, H. ; Baur, B. ; Emeis, N. ; Schier, M.</creator><creatorcontrib>Heinecke, H. ; Baur, B. ; Emeis, N. ; Schier, M.</creatorcontrib><description>We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ
g=1.050
μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolerance band was measured. The effect of the substrate misorientation is briefly discussed. Finally we present the data of the fully MOMBE grown structure for the vertical integration of waveguides and photodiodes. Dark currents vary between 130–600 pA and the device capacity is below 100 fF for 10 V reverse voltage for the selected device geometry.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/0022-0248(92)90378-V</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of crystal growth, 1992-05, Vol.120 (1), p.140-144</ispartof><rights>1992</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-3ada47dc3a444e1846e85131aba3b8ef09e30cf494c3aa4e200a30a245c441183</citedby><cites>FETCH-LOGICAL-c430t-3ada47dc3a444e1846e85131aba3b8ef09e30cf494c3aa4e200a30a245c441183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0022-0248(92)90378-V$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5250901$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Heinecke, H.</creatorcontrib><creatorcontrib>Baur, B.</creatorcontrib><creatorcontrib>Emeis, N.</creatorcontrib><creatorcontrib>Schier, M.</creatorcontrib><title>Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration</title><title>Journal of crystal growth</title><description>We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ
g=1.050
μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolerance band was measured. The effect of the substrate misorientation is briefly discussed. Finally we present the data of the fully MOMBE grown structure for the vertical integration of waveguides and photodiodes. Dark currents vary between 130–600 pA and the device capacity is below 100 fF for 10 V reverse voltage for the selected device geometry.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPwzAQhC0EEuXxDzj4gBAcQtePpMkFqVRQKoHgAJyQLNfZUKM0KbZT1H-PS6seOc1hv5nVDCFnDK4ZsKwPwHkCXOaXBb8qQAzy5H2P9Fg-EEkaj_ukt0MOyZH3XwDRx6BHPsau_Qkz2lZ0Zj9n9Yp2ja1aN6eT5qU_1pNm6LfyQmcY0LU-uM6EzqGn0xV9en66vaPRQUtcWoPUNgE_nQ62bU7IQaVrj6dbPSZv93evo4fk8Xk8GQ0fEyMFhEToUstBaYSWUiLLZYZ5ygTTUy2mOVZQoABTyUJGREvkAFqA5jI1UjKWi2NysclduPa7Qx_U3HqDda0bbDuveJplPOUignIDmljDO6zUwtm5divFQK2nVOud1HonVXD1N6V6j7bzbb72RteV042xfudNeQoFsIjdbDCMXZcWnfLGYmOwtA5NUGVr___zC05Ihwc</recordid><startdate>19920501</startdate><enddate>19920501</enddate><creator>Heinecke, H.</creator><creator>Baur, B.</creator><creator>Emeis, N.</creator><creator>Schier, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19920501</creationdate><title>Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration</title><author>Heinecke, H. ; Baur, B. ; Emeis, N. ; Schier, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-3ada47dc3a444e1846e85131aba3b8ef09e30cf494c3aa4e200a30a245c441183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Heinecke, H.</creatorcontrib><creatorcontrib>Baur, B.</creatorcontrib><creatorcontrib>Emeis, N.</creatorcontrib><creatorcontrib>Schier, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Heinecke, H.</au><au>Baur, B.</au><au>Emeis, N.</au><au>Schier, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration</atitle><jtitle>Journal of crystal growth</jtitle><date>1992-05-01</date><risdate>1992</risdate><volume>120</volume><issue>1</issue><spage>140</spage><epage>144</epage><pages>140-144</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ
g=1.050
μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolerance band was measured. The effect of the substrate misorientation is briefly discussed. Finally we present the data of the fully MOMBE grown structure for the vertical integration of waveguides and photodiodes. Dark currents vary between 130–600 pA and the device capacity is below 100 fF for 10 V reverse voltage for the selected device geometry.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/0022-0248(92)90378-V</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1992-05, Vol.120 (1), p.140-144 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25662523 |
| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T16%3A52%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20highly%20uniform%20InP/GaInAs/GaInAsP%20heterostructures%20by%20MOMBE%20for%20device%20integration&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Heinecke,%20H.&rft.date=1992-05-01&rft.volume=120&rft.issue=1&rft.spage=140&rft.epage=144&rft.pages=140-144&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/0022-0248(92)90378-V&rft_dat=%3Cproquest_cross%3E25662523%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25662523&rft_id=info:pmid/&rft_els_id=002202489290378V&rfr_iscdi=true |