Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration

We report on the growth of highly uniform GaInAsP layers which can be achieved reproducibly over a long period. Quaternary layers with, e.g., λ g=1.050 μm are obtained with a variation of the gap wavelength within ±1 nm over one wafer. For the run to run reproducibility nearly the same narrow tolerance band was measured. The effect of the substrate misorientation is briefly discussed. Finally we present the data of the fully MOMBE grown structure for the vertical integration of waveguides and photodiodes. Dark currents vary between 130–600 pA and the device capacity is below 100 fF for 10 V reverse voltage for the selected device geometry.