Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. Condensed matter 2021-11, Vol.33 (46), p.465703
Hauptverfasser:	Liu, Chao Ping, Li, Zhan Hua, Egbo, Kingsley O, Kwok, Cheuk Kai, Lv, Xiao Hu, Ho, Chun Yuen, Wang, Ying, Yu, Kin Man
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminum doped zinc oxide defect evolution Hall effect measurement optoelectrical properties spectroscopic ellipsometry x-ray photoelectron spectroscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	46
container_start_page	465703
container_title	Journal of physics. Condensed matter
container_volume	33
creator	Liu, Chao Ping Li, Zhan Hua Egbo, Kingsley O Kwok, Cheuk Kai Lv, Xiao Hu Ho, Chun Yuen Wang, Ying Yu, Kin Man
description
doi_str_mv	10.1088/1361-648X/ac1f50
format	Article
fullrecord	<record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_2563426875</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2563426875</sourcerecordid><originalsourceid>FETCH-LOGICAL-c345t-eb10592a29938888b59bdbe9b34c63cae38313aacb679a6f70d3c00dea15288d3</originalsourceid><addsrcrecordid>eNp1kEFvFCEYhonRxO3q3SM3e-i0MAyzzLHZVm3SxIsm3ggDHysNAyMwtevP8BfLZBtPSr4EQp73Sb4XoXeUXFIixBVlPW36Tny7UppaTl6gzd-vl2hDBs4aMYjuNTrL-YEQ0gnWbdDvW2tBl4yjxfHpeICArY8_cVLFRayCweU7pEn5-g6gvAsHHAM2sKYwPEa_VDCsceWXyYVlwibOYPAvF3RVOgNV4arW-Snj8YgTKF3cI-CbPZ7UIUBJVZDnpRRI1f8GvbLKZ3j7fG_R1w-3X_afmvvPH-_21_eNZh0vDYyU8KFV7TAwUc_Ih9GMMIys0z3TCphglCmlx343qN7uiGGaEAOK8lYIw7bo_OSdU_yxQC5yclmD9ypAXLJsec-6thc7XlFyQnWKOSewck5uUukoKZFr_XLtWq5dy1P9NfL-FHFxlg9xSaHuIvUkGZNdX4fvCJOzsZW8-Af5X_Ef2ouW8w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2563426875</pqid></control><display><type>article</type><title>Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Liu, Chao Ping ; Li, Zhan Hua ; Egbo, Kingsley O ; Kwok, Cheuk Kai ; Lv, Xiao Hu ; Ho, Chun Yuen ; Wang, Ying ; Yu, Kin Man</creator><creatorcontrib>Liu, Chao Ping ; Li, Zhan Hua ; Egbo, Kingsley O ; Kwok, Cheuk Kai ; Lv, Xiao Hu ; Ho, Chun Yuen ; Wang, Ying ; Yu, Kin Man</creatorcontrib><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/1361-648X/ac1f50</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>aluminum doped zinc oxide ; defect evolution ; Hall effect measurement ; optoelectrical properties ; spectroscopic ellipsometry ; x-ray photoelectron spectroscopy</subject><ispartof>Journal of physics. Condensed matter, 2021-11, Vol.33 (46), p.465703</ispartof><rights>2021 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-eb10592a29938888b59bdbe9b34c63cae38313aacb679a6f70d3c00dea15288d3</citedby><cites>FETCH-LOGICAL-c345t-eb10592a29938888b59bdbe9b34c63cae38313aacb679a6f70d3c00dea15288d3</cites><orcidid>0000-0003-3643-9165 ; 0000-0003-3802-9557 ; 0000-0001-5303-8078 ; 0000-0001-6045-4715</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-648X/ac1f50/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Liu, Chao Ping</creatorcontrib><creatorcontrib>Li, Zhan Hua</creatorcontrib><creatorcontrib>Egbo, Kingsley O</creatorcontrib><creatorcontrib>Kwok, Cheuk Kai</creatorcontrib><creatorcontrib>Lv, Xiao Hu</creatorcontrib><creatorcontrib>Ho, Chun Yuen</creatorcontrib><creatorcontrib>Wang, Ying</creatorcontrib><creatorcontrib>Yu, Kin Man</creatorcontrib><title>Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering</title><title>Journal of physics. Condensed matter</title><addtitle>JPhysCM</addtitle><addtitle>J. Phys.: Condens. Matter</addtitle><subject>aluminum doped zinc oxide</subject><subject>defect evolution</subject><subject>Hall effect measurement</subject><subject>optoelectrical properties</subject><subject>spectroscopic ellipsometry</subject><subject>x-ray photoelectron spectroscopy</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kEFvFCEYhonRxO3q3SM3e-i0MAyzzLHZVm3SxIsm3ggDHysNAyMwtevP8BfLZBtPSr4EQp73Sb4XoXeUXFIixBVlPW36Tny7UppaTl6gzd-vl2hDBs4aMYjuNTrL-YEQ0gnWbdDvW2tBl4yjxfHpeICArY8_cVLFRayCweU7pEn5-g6gvAsHHAM2sKYwPEa_VDCsceWXyYVlwibOYPAvF3RVOgNV4arW-Snj8YgTKF3cI-CbPZ7UIUBJVZDnpRRI1f8GvbLKZ3j7fG_R1w-3X_afmvvPH-_21_eNZh0vDYyU8KFV7TAwUc_Ih9GMMIys0z3TCphglCmlx343qN7uiGGaEAOK8lYIw7bo_OSdU_yxQC5yclmD9ypAXLJsec-6thc7XlFyQnWKOSewck5uUukoKZFr_XLtWq5dy1P9NfL-FHFxlg9xSaHuIvUkGZNdX4fvCJOzsZW8-Af5X_Ef2ouW8w</recordid><startdate>20211117</startdate><enddate>20211117</enddate><creator>Liu, Chao Ping</creator><creator>Li, Zhan Hua</creator><creator>Egbo, Kingsley O</creator><creator>Kwok, Cheuk Kai</creator><creator>Lv, Xiao Hu</creator><creator>Ho, Chun Yuen</creator><creator>Wang, Ying</creator><creator>Yu, Kin Man</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-3643-9165</orcidid><orcidid>https://orcid.org/0000-0003-3802-9557</orcidid><orcidid>https://orcid.org/0000-0001-5303-8078</orcidid><orcidid>https://orcid.org/0000-0001-6045-4715</orcidid></search><sort><creationdate>20211117</creationdate><title>Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering</title><author>Liu, Chao Ping ; Li, Zhan Hua ; Egbo, Kingsley O ; Kwok, Cheuk Kai ; Lv, Xiao Hu ; Ho, Chun Yuen ; Wang, Ying ; Yu, Kin Man</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-eb10592a29938888b59bdbe9b34c63cae38313aacb679a6f70d3c00dea15288d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>aluminum doped zinc oxide</topic><topic>defect evolution</topic><topic>Hall effect measurement</topic><topic>optoelectrical properties</topic><topic>spectroscopic ellipsometry</topic><topic>x-ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Chao Ping</creatorcontrib><creatorcontrib>Li, Zhan Hua</creatorcontrib><creatorcontrib>Egbo, Kingsley O</creatorcontrib><creatorcontrib>Kwok, Cheuk Kai</creatorcontrib><creatorcontrib>Lv, Xiao Hu</creatorcontrib><creatorcontrib>Ho, Chun Yuen</creatorcontrib><creatorcontrib>Wang, Ying</creatorcontrib><creatorcontrib>Yu, Kin Man</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Chao Ping</au><au>Li, Zhan Hua</au><au>Egbo, Kingsley O</au><au>Kwok, Cheuk Kai</au><au>Lv, Xiao Hu</au><au>Ho, Chun Yuen</au><au>Wang, Ying</au><au>Yu, Kin Man</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering</atitle><jtitle>Journal of physics. Condensed matter</jtitle><stitle>JPhysCM</stitle><addtitle>J. Phys.: Condens. Matter</addtitle><date>2021-11-17</date><risdate>2021</risdate><volume>33</volume><issue>46</issue><spage>465703</spage><pages>465703-</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><pub>IOP Publishing</pub><doi>10.1088/1361-648X/ac1f50</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-3643-9165</orcidid><orcidid>https://orcid.org/0000-0003-3802-9557</orcidid><orcidid>https://orcid.org/0000-0001-5303-8078</orcidid><orcidid>https://orcid.org/0000-0001-6045-4715</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0953-8984
ispartof	Journal of physics. Condensed matter, 2021-11, Vol.33 (46), p.465703
issn	0953-8984 1361-648X
language	eng
recordid	cdi_proquest_miscellaneous_2563426875
source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	aluminum doped zinc oxide defect evolution Hall effect measurement optoelectrical properties spectroscopic ellipsometry x-ray photoelectron spectroscopy
title	Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T15%3A56%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20oxygen%20flow%20ratio%20and%20thermal%20annealing%20on%20defect%20evolution%20of%20aluminum%20doped%20zinc%20oxide%20thin%20films%20by%20reactive%20DC%20magnetron%20sputtering&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Liu,%20Chao%20Ping&rft.date=2021-11-17&rft.volume=33&rft.issue=46&rft.spage=465703&rft.pages=465703-&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/1361-648X/ac1f50&rft_dat=%3Cproquest_iop_j%3E2563426875%3C/proquest_iop_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2563426875&rft_id=info:pmid/&rfr_iscdi=true