Depletion and enhancement modes in InP MISFETs for power amplification

A pseudo two-dimensional model is proposed in order to describe the possibilities of the InP MISFET in enhancement and depletion modes, and a validation of the results is determined from experimental measurements. The drain current versus drain-source and gate-source voltages characteristics are established. They make possible to value the maximum drain current and the breakdown voltage which constitute important parameters for power applications. Moreover, the main device parameters and the determination of the potential microwave performances are deduced. The results show that the InP MISFET is a very interesting alternative for microwave power amplification. (Author)