Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes
Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with, maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approxi...
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Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1992-08, Vol.39 (4), p.546-550 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with, maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approximately 1.7*10/sup 4/ photons per MeV of absorbed gamma -ray energy. The scintillation light can be efficiently detected with silicon photodiodes. Results are presented. Main decay time components of 270 ns and 3.0 mu s were measured. The scintillation mechanism and the application of the material are discussed. Some data regarding a similar system, ZnSe(Te), are presented.< > |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/23.159663 |