Diamond growth by a new method based upon sequential exposure to atomic carbon and hydrogen
We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of b...
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Veröffentlicht in: | Applied physics letters 1992-05, Vol.60 (20), p.2502-2504 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of being able to grow diamond by a sequential process, and from the simple constituents of atomic carbon and hydrogen, are discussed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.106947 |