Diamond growth by a new method based upon sequential exposure to atomic carbon and hydrogen

We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of b...

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Veröffentlicht in:Applied physics letters 1992-05, Vol.60 (20), p.2502-2504
Hauptverfasser: KELLY, M. A, OLSON, D. S, SANJIV KAPOOR, HAGSTROM, S. B
Format: Artikel
Sprache:eng
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Zusammenfassung:We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of being able to grow diamond by a sequential process, and from the simple constituents of atomic carbon and hydrogen, are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106947