Deposition of copper oxide thin films on different substrates by pulsed excimer laser ablation

Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction,...

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Veröffentlicht in:	Journal of applied physics 1992-10, Vol.72 (8), p.3765-3769
Hauptverfasser:	OGALE, S. B, BILURKAR, P. G, MATE, N, KANETKAR, S. M, NALIN PARIKH, BIJOY PATNAIK
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction, infrared, and UV-visible spectroscopies and Rutherford backscattering spectroscopy. It is shown that epitaxy of Cu2O films can be realized on single crystal MgO (100) substrates and the corresponding film resistivity is of the order of 40–60 Ω cm.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.352271