Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)

Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)

The transport properties of a two-dimensional electron gas in Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 mu m showed a transconduct...

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Veröffentlicht in:IEEE transactions on electron devices 1990-08, Vol.37 (8), p.1924-1926
Hauptverfasser: Hong, W.P., Zrenner, A., Kim, O.H., Harbison, J., Florez, L., Derosa, F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Atomic layer deposition
Doping
Electronics
Electrons
Epitaxial layers
Exact sciences and technology
FETs
Gallium arsenide
Molecular beam epitaxial growth
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transconductance
Transistors
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Zusammenfassung:The transport properties of a two-dimensional electron gas in Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 mu m showed a transconductance as high as 340 mS/mm. The FETs also showed a broad plateau of transconductance around its peak, which is not typical in MODFETs.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57147